Boron makes silicon super

Metal gettering by boron-silicide precipitates in boron-implanted silicon

Sandia National Laboratories, Albuquerque, New Mexico 871 85-1 056 PT"3 1 j 3 r 3 q a,,3 We show that Fe, Coy Cu, and Au impurities in Si are strongly gettered to boron-silicideprecipitates formed by supersaturation B implantation and annealing. Effective binding fr energies relative to interstitial solution range from somewhat above 1 to more than 2 eV. The B-Si precipitates formed at temperat...

Stabilization of boron carbide via silicon doping.

Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in ...

Boron carbide/n-silicon carbide heterojunction diodes

Interstitial charge states in boron-implanted silicon

It is becoming increasingly clear that simulation models of transient enhanced diffusion sTEDd in silicon need to incorporate interstitial charging effects accurately in order to adequately reproduce experimental data near the surface and near the underlying junction. However, in the case of boron TED, the relevant charge states and ionization levels of both boron and silicon interstitial atoms...

Superconductivity in heavily boron-doped silicon carbide.

The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped ...